Analytical modeling of SRAM dynamic stability

In this paper, for the first time, a theory for evaluating dynamic noise margins of SRAM cells is developed analytically. The results allow predicting the transient error susceptibility of an SRAM cell using a closed-form expression. The key innovation involves using the methods of nonlinear system theory in developing the model. It is shown that when a transient noise of given magnitude affects a sensitive node of a cell, the bi-stable, feedback-driven nature of the cell determines whether the noise will be suppressed or will evolve to eventually flip state. The specific formal and quantitative result is a closed-form expression that can be used to predict whether a cell flip will occur for a noise signal with specific characteristics, and for a given SRAM cell design. Experiments show excellent match between the analytical prediction and the SPICE simulation results.

• Type: Conference
• Year: 2006
• Where: ICCAD
• Authors: Bin Zhang, Ari Arapostathis, Sani R. Nassif, Michael Orshansky
• Keywords: Cell Flip, Dynamic Noise Margins, Hardware, ICCAD 2006, SRAM Cell Design