Back-illuminated ultraviolet image sensor in silicon-on-sapphire

— We present a back-illuminated 32 x 32 pixel SOI image sensor chip in 0.5-µm silicon-on-sapphire process capable of ultraviolet imaging. The imager performs ”snap-shot” image acquisition and analog readout at a continuous rate of a thousand frames/s and consumes as little as 650 µW. Each pixel consists of a photodiode and a memory capacitor in 40 µm x 40 µm with a fill factor of 43%. The image sensor is suited for hyper-spectral imaging at high speeds.

• Type: Conference
• Year: 2008
• Where: ISCAS
• Authors: Joon Hyuk Park, Eugenio Culurciello
• Keywords: Hardware, Image Sensor, ISCAS 2008, Pixel Soi Image, Sensor Chip