Electrostatically-Driven Resonator on Soi with Improved Temperature Stability

This paper deals with a single-crystal-silicon (SCS) MEMS resonator with improved temperature stability. While simulations have shown that the temperature coefficient of resonant frequency can be down to 1 ppm/°C, preliminary measurements on non-optimised structures gave evidence of a temperature coefficient of 29 ppm/°C. Design, optimisation, experimental results with post process simulation and prospective work are presented.

• Type: Journal
• Year: 2007
• Where: CORR
• Authors: A. Giridhar, F. Verjus, F. Marty, A. Bosseboeuf, T. Bourouina
• Keywords: CORR 2007, Education, Post Process Simulation, Temperature Coefficient, Temperature Stability