Reducing Switching Latency and Energy in STT-MRAM Caches With Field-Assisted Writing

Abstract—A field-assisted spin-torque transfer magnetoresistive RAM (STT-MRAM) cache is presented for the use in high-performance energy-efficient microprocessors. Adding field assistance reduces the switching latency by a factor of 4. An array model is developed to evaluate the switching energy for different field currents and array sizes. Several STT-MRAM-based cells demonstrate a 55% energy reduction as compared with an SRAM cache subsystem. As compared with STT-MRAM caches with subbank buffering and differential writes, a field-assisted STT-MRAM cache improves the system performance by 28%, with a 6.7% increase in energy.

• Type: Journal
• Year: 2016
• Where: TVLSI
• Authors: Ravi Patel, Xiaochen Guo, Qing Guo, Engin Ipek, Eby G. Friedman
• Keywords: TVLSI 2016