Sciweavers

2 search results - page 1 / 1
» Behavior-Level Observability Analysis for Operation Gating i...
Sort
View
ISVLSI
2005
IEEE
129views VLSI» more  ISVLSI 2005»
14 years 1 months ago
Reduction of Direct Tunneling Power Dissipation during Behavioral Synthesis of Nanometer CMOS Circuits
— Direct tunneling current is the major component of static power dissipation of a CMOS circuit for technology below 65nm, where the gate dielectric (SiO2) is very low. We intuit...
Saraju P. Mohanty, Ramakrishna Velagapudi, Valmiki...