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CORR
2010
Springer
128views Education» more  CORR 2010»
13 years 6 months ago
Trajectory Codes for Flash Memory
Abstract--Flash memory is well-known for its inherent asymmetry: the flash-cell charge levels are easy to increase but are hard to decrease. In a general rewriting model, the store...
Anxiao Jiang, Michael Langberg, Moshe Schwartz, Je...
FAST
2010
13 years 9 months ago
DFS: A File System for Virtualized Flash Storage
This paper presents the design, implementation and evaluation of Direct File System (DFS) for virtualized flash storage. of using traditional layers of abstraction, our layers of ...
William K. Josephson, Lars Ailo Bongo, David Flynn...
SIGMOD
2011
ACM
238views Database» more  SIGMOD 2011»
12 years 11 months ago
Data management over flash memory
Flash SSDs are quickly becoming mainstream and emerge as alternatives to magnetic disks. It is therefore imperative to incorporate them seamlessly into the enterprise. We present ...
Ioannis Koltsidas, Stratis Viglas
TIT
2010
96views Education» more  TIT 2010»
13 years 3 months ago
Codes for asymmetric limited-magnitude errors with application to multilevel flash memories
Several physical effects that limit the reliability and performance of multilevel flash memories induce errors that have low magnitudes and are dominantly asymmetric. This paper st...
Yuval Cassuto, Moshe Schwartz, Vasken Bohossian, J...
VLSID
2008
IEEE
122views VLSI» more  VLSID 2008»
14 years 2 months ago
Testing Flash Memories for Tunnel Oxide Defects
— Testing non volatile memories for tunnel oxide defects is one of the most important aspects to guarantee cell reliability. Defective tunnel oxide layer in core memory cells can...
Mohammad Gh. Mohammad, Kewal K. Saluja