Several physical effects that limit the reliability and performance of multilevel flash memories induce errors that have low magnitudes and are dominantly asymmetric. This paper st...
Abstract--Memories whose storage cells transit irreversibly between states have been common since the start of the data storage technology. In recent years, flash memories have bec...
Memory subsystems have been considered as one of the most critical components in embedded systems and furthermore, displaying increasing complexity as application requirements div...
We discover significant value-dependent programming energy variations in multi-level cell (MLC) flash memories, and introduce an energy-aware data compression method that minimize...
Codes for rank modulation have been recently proposed as a means of protecting flash memory devices from errors. We study basic coding theoretic problems for such codes, representi...