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» Trajectory Codes for Flash Memory
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TIT
2010
96views Education» more  TIT 2010»
13 years 2 months ago
Codes for asymmetric limited-magnitude errors with application to multilevel flash memories
Several physical effects that limit the reliability and performance of multilevel flash memories induce errors that have low magnitudes and are dominantly asymmetric. This paper st...
Yuval Cassuto, Moshe Schwartz, Vasken Bohossian, J...
TIT
2010
94views Education» more  TIT 2010»
13 years 2 months ago
Rewriting codes for joint information storage in flash memories
Abstract--Memories whose storage cells transit irreversibly between states have been common since the start of the data storage technology. In recent years, flash memories have bec...
Anxiao Jiang, Vasken Bohossian, Jehoshua Bruck
CODES
2008
IEEE
13 years 9 months ago
Application specific non-volatile primary memory for embedded systems
Memory subsystems have been considered as one of the most critical components in embedded systems and furthermore, displaying increasing complexity as application requirements div...
Kwangyoon Lee, Alex Orailoglu
DAC
2007
ACM
14 years 8 months ago
Energy-Aware Data Compression for Multi-Level Cell (MLC) Flash Memory
We discover significant value-dependent programming energy variations in multi-level cell (MLC) flash memories, and introduce an energy-aware data compression method that minimize...
Yongsoo Joo, Youngjin Cho, Donghwa Shin, Naehyuck ...
TIT
2010
103views Education» more  TIT 2010»
13 years 2 months ago
Codes in permutations and error correction for rank modulation
Codes for rank modulation have been recently proposed as a means of protecting flash memory devices from errors. We study basic coding theoretic problems for such codes, representi...
Alexander Barg, Arya Mazumdar