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ISCAS
2008
IEEE
162views Hardware» more  ISCAS 2008»
14 years 5 months ago
Spin-transfer torque magnetoresistive content addressable memory (CAM) cell structure design with enhanced search noise margin
— This paper presents a new memory cell structure for content addressable memory (CAM) based on magnetic tunneling junction (MTJ). Each CAM cell employs a pair of differential MT...
Wei Xu, Tong Zhang, Yiran Chen