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ISCAS
2008
IEEE
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ISCAS 2008
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Spin-transfer torque magnetoresistive content addressable memory (CAM) cell structure design with enhanced search noise margin
14 years 6 months ago
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cobweb.ecn.purdue.edu
— This paper presents a new memory cell structure for content addressable memory (CAM) based on magnetic tunneling junction (MTJ). Each CAM cell employs a pair of differential MT...
Wei Xu, Tong Zhang, Yiran Chen
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