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    VLSID
    2005
    IEEE
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    Impact of Channel Engineering on Unity Gain Frequency and Noise-Figure in 90nm NMOS Transistor for RF Applications
    15 years 25 days ago
    Impact of Channel Engineering on Unity Gain Frequency and Noise-Figure in 90nm NMOS Transistor for RF Applications
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    In this paper, we have studied and compared the RF performance metrics, unity gain frequency (ft) and Noise Figure (NF), of the devices with channel engineering consisting of halo...
    R. Srinivasan, Navakanta Bhat
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