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25
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ISVLSI
2005
IEEE
129
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ISVLSI 2005
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Reduction of Direct Tunneling Power Dissipation during Behavioral Synthesis of Nanometer CMOS Circuits
14 years 6 months ago
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www.cse.unt.edu
— Direct tunneling current is the major component of static power dissipation of a CMOS circuit for technology below 65nm, where the gate dielectric (SiO2) is very low. We intuit...
Saraju P. Mohanty, Ramakrishna Velagapudi, Valmiki...
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