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ICCD
2004
IEEE
154
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ICCD 2004
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Transistor and Pin Reordering for Gate Oxide Leakage Reduction in Dual T{ox} Circuits
15 years 11 months ago
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iccd.et.tudelft.nl
Gate oxide tunneling current (Igate) is emerging as a key roadblock for device scaling in nanometer-scale CMOS circuits. A practical means to reduce Igate is to leverage dual Tox ...
Anup Kumar Sultania, Dennis Sylvester, Sachin S. S...
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