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    MJ
    2008
    148views more  MJ 2008»
    Drive current boosting of n-type tunnel FET with strained SiGe layer at source
    14 years 16 days ago
    Drive current boosting of n-type tunnel FET with strained SiGe layer at source
    Download  www.cedt.iisc.ernet.in
    Though silicon tunnel field effect transistor (TFET) has attracted attention for sub-60 mV/decade subthreshold swing and very small OFF current (IOFF), its practical application i...
    Nayan Patel, A. Ramesha, Santanu Mahapatra
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    ISLPED
    2009
    ACM
    168views Hardware» more  ISLPED 2009»
    Low power circuit design based on heterojunction tunneling transistors (HETTs)
    14 years 7 months ago
    Low power circuit design based on heterojunction tunneling transistors (HETTs)
    Download  www.eecs.umich.edu
    The theoretical lower limit of subthreshold swing in MOSFETs (60 mV/decade) significantly restricts low voltage operation since it results in a low ON to OFF current ratio at low ...
    Daeyeon Kim, Yoonmyung Lee, Jin Cai, Isaac Lauer, ...
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