TCAM cell | Sciweavers

ISCAS
2008
IEEE

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Spin-transfer torque magnetoresistive content addressable memory (CAM) cell structure design with enhanced search noise margin

14 years 5 months ago

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— This paper presents a new memory cell structure for content addressable memory (CAM) based on magnetic tunneling junction (MTJ). Each CAM cell employs a pair of differential MT...

Wei Xu, Tong Zhang, Yiran Chen

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