A new CMOS wideband RF front-end for multistandard low-IF wireless receivers

—A wideband radio-frequency (RF) receiver front-end is designed in 0.18 µm CMOS technology with a new technique of linearization that makes the circuit suitable for operating at low supply voltage. The proposed front-end circuit includes an input low noise wideband amplifying stage (LNA) of new configuration with output linearized transconductance stage, and a switching stage. Dual-loop resistive feedback applied around LNA allows one to achieve input wideband matching. Linearity is enhanced by attenuating the effective transconductance of the transconductance stage. With an RF

• Type: Conference
• Year: 2005
• Where: ISCAS
• Authors: Igor M. Filanovsky, Md. Mahbub Reja, Ahmed Allam
• Keywords: ISCAS 2005, Transconductance Stage, Wideband Amplifying Stage, —A Wideband Radio-frequency