A high-to-low switching DC-DC converter that operates at input supply voltages up to two times as high as the maximum voltage permitted in a nanometer CMOS technology is proposed in this paper. The circuit technique is based on a cascode bridge that maintains the steady-state voltage differences among the terminals of all of the transistors within a range imposed by a specific fabrication technology. The proposed circuit technique permits the full integration of active and passive devices of a switching DC-DC converter with a high voltage conversion ratio in a standard low voltage CMOS process. An efficiency of 87.8% is achieved for 3.6 volts to 0.9 volts conversion assuming a 0.18 µm CMOS technology. The DC-DC converter operates at a switching frequency of 97 MHz while supplying a DC current of 250 mA to the load.
Volkan Kursun, Gerhard Schrom, Vivek De, Eby G. Fr