We have been developing a microdisplay based on the field emission display (FED) technology, which is advantageous in power consumption, image quality and long term stability. We have adopted LSIdriven anode pixels, which enables active-matrix addressing and, therefore, highly precise and high-quality microdisplay. The structure was optimized according to the simulation study of electric field and electron trajectories. The driver LSI has been designed, evaluated by simulation, and the wafers have been produced. Anti-crosstalk grid should be constructed on the LSI by photolithography and the relevant study has been performed.