BiCMOS Variable Gain LNA at C-Band with Ultra Low Power Consumption for WLAN

An ultra low power consuming low noise amplifier (LNA) at C-band with variable gain for adaptive antenna combining is presented in this paper. The microwave monolithic integrated circuit (MMIC) was fabricated using commercial 0.25 µm bipolar complementary metal oxide semiconductor (BiCMOS)

• Type: Conference
• Year: 2004
• Where: ICT
• Authors: Frank Ellinger, C. Carta, L. Rodoni, G. von Büren, D. Barras, Martin L. Schmatz, Heinz Jäckel
• Keywords: Communications, Complementary Metal Oxide Semiconductor, Consuming Low Noise, ICT 2004, Monolithic Integrated Circuit