Simple noise formulas for MOS analog design

The designer needs simple and accurate models to estimate noise in MOS transistors as a function of their size, bias point and technology. In this work, we present a simple, continuous, physics-based model for flicker noise. We review also thermal noise and we examine the behavior of the corner frequency (fc) in terms of the bias point. The expressions that are presented are simple and valid in all the operating regions, from weak to strong inversion, constituting a useful set of equations for low noise analog design. Finally we examine the design of two low noise circuit elements, fabricated in a 0.8µm technology.

• Type: Conference
• Year: 2003
• Where: ISCAS
• Authors: Alfredo Arnaud, Carlos Galup-Montoro
• Keywords: Bias Point, ISCAS 2003, Low Noise, Low Noise Analog