A Multiple-Valued Ferroelectric Content-Addressable Memory

A novel architecturefor a Multiple-Valued Ferroelectric Content-Addressable Memory (FCAM) is proposed. An FCAM employs ferroelectric capacitors as storage elements to provide a nonvolatile content-addressable memory. A 2-bit search operation is performed by a simultaneous access to a 4-level polarization, hence reducing the total number of search operations to hay Four FCAM structures are discussed in ternu of their speed, area, and implementationfeasibility.

• Type: Conference
• Year: 1996
• Where: ISMVL
• Authors: Ali Sheikholeslami, P. Glenn Gulak, Takahiro Hanyu
• Keywords: Ferroelectric Capacitors, Ferroelectric Content-Addressable Memory, Hardware, ISMVL 1996, Nonvolatile Content-addressable Memory