Codes for Partially Stuck-At Memory Cells

—This paper studies a new model of stuck-at memory cells which is motivated by the defect model of multi-level cells in non-volatile memories such as flash memories and phase change memories. If a cell can store the levels 0, 1, . . . , q − 1, we say that it is partially stuck-at s if it can only store values which are

• Type: Journal
• Year: 2016
• Where: TIT
• Authors: Antonia Wachter-Zeh, Eitan Yaakobi
• Keywords: Education, TIT 2016