3D integrated sensors in silicon-on-sapphire CMOS

We fabricated a 3D-integrated multi-chip sensor separate dies [9]. In this paper, we present a 3D integrated and actuator and demonstrated the ability of communication with temperature actuator and sensor to demonstrate the perfora floating die and no galvanic connection. The prototype was mance and capabilities of our 3D systems and technology. The fabricated on a conventional 0.51im Silicon-on-Sapphire (SOS) . . . process. We designed a heater and a temperature sensor module prototype was fabricated on a flavor of Silicon-on-Insulator with digital output based on a bandgap voltage reference. We (SOI) process: a 0.5um Silicon-on-Sapphire (SOS) process. used capacitive coupling to provide both intra-die communication of the digital temperature readings and also energy-harvesting by means of a charge pump. The non-galvanically interconnected charge pum receiver bandgap reference prototype is an enabling technology for three-dimensional VLSI top die Temp, Vref fabrication, 3D CMOS, wafer...

• Type: Conference
• Year: 2006
• Where: ISCAS
• Authors: Eugenio Culurciello, Andreas G. Andreou
• Keywords: 3D-integrated Multi-chip Sensor, Bandgap Reference Prototype, ISCAS 2006, Sensor Module Prototype