Recent increases in the density and size of memory ICs made it ne cessary to search for new defect tolerance techniques since the traditional methods are no longer e ective enough. Several new such schemes have been recently proposed and implemented. Due to the high complexity of these new techniques compared to the simple row and column redundancy, Monte-Carlo simulations wer e used to evaluate their yield enhancement. In this paper we present a yield analysis of one such new design and compare its yield to that of the traditional design.