Combined circuit and microarchitecture techniques for effective soft error robustness in SMT processors

As semiconductor technology scales, reliability is becoming an increasingly crucial challenge in microprocessor design. The rSRAM and voltage scaling are two promising circuit-level radiation hardening techniques to increase soft error robustness of a SRAM-based storage cell. However, applying circuit-level radiation hardening techniques to all on-chip transistors will result in significant overhead in performance and power consumption. In this paper, we propose microarchitecture support that allows cost-effective implementation of radiation hardened key microarchitecture structures (e.g. issue queue and reorder buffer) in SMT processors using soft error robust circuit techniques. Our study shows that the combined circuit and microarchitecture techniques achieve attractive tradeoffs between reliability, performance and power.

• Type: Conference
• Year: 2008
• Where: DSN
• Authors: Xin Fu, Tao Li, José A. B. Fortes
• Keywords: Circuit-level Radiation, Computer Networks, DSN 2008, Promising Circuit-level Radiation, Radiation Hardening Techniques