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DATE
2006
IEEE

Enabling fine-grain leakage management by voltage anchor insertion

14 years 5 months ago
Enabling fine-grain leakage management by voltage anchor insertion
Functional unit shutdown based on MTCMOS devices is effective for leakage reduction in aggressively scaled technologies. However, the applicability of MTCMOS-based shutdown in a synthesis-based design flow poses the challenge of interfacing logic blocks in shutdown mode with active units: The outputs of inactive gates can float at intermediate voltages, causing very large short-circuit currents in the active gates they drive. In this paper, we propose two novel low-overhead elementary cells that fully address this issue. These cells can be added to any synthesis library, and they can be inserted into a netlist at the boundary between shutdown and active regions. Our results show that: (i) Our cells solve the interfacing problem with minimum overhead; (ii) A nonintrusive design flow enhancement is sufficient to automatically insert interface cells in post-synthesis netlists.
Pietro Babighian, Luca Benini, Alberto Macii, Enri
Added 10 Jun 2010
Updated 10 Jun 2010
Type Conference
Year 2006
Where DATE
Authors Pietro Babighian, Luca Benini, Alberto Macii, Enrico Macii
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