High-frequency noise in RF active CMOS mixers

- A new analytical model for high-frequency noise in RF active CMOS mixers such as single-balanced and double-balanced architectures is presented. The analysis includes the contribution of non-white gate-induced noise at the output as well as the spot noise figure (NF) of the RF CMOS mixer, while accounting for the non-zero correlation between the gate-induced noise and the channel thermal noise. The noise contribution of the RF transconductor as well as the switching pair on the output noise is discussed. The analytical model predicts that the output noise and NF are both a strong function of the LO frequency at gigahertz range of frequencies. Simulation results verify the accuracy of the analytical model.

• Type: Conference
• Year: 2004
• Where: ASPDAC
• Authors: Payam Heydari
• Keywords: Analytical Model, ASPDAC 2004, Gate-induced Noise, Output Noise