Modeling of MOS transistors based on genetic algorithm and simulated annealing

— A novel method to extract the efficient model for Metal-Oxide-Semiconductor (MOS) transistors in order to satisfy a specific accuracy is presented. The approach presented here utilizes a Genetic Algorithm (GA) to choose the necessary physical and heuristic elements in order to define a compact yet accurate model for MOS I-V characteristic. Then the values of the free parameters related to each element are determined using Simulated Annealing (SA). For a desired accuracy considered here, the accuracy of the results predicted

• Type: Conference
• Year: 2005
• Where: ISCAS
• Authors: Mohammad Taherzadeh-Sani, Ali Abbasian, Behnam Amelifard, Ali Afzali-Kusha
• Keywords: Efficient Model, Genetic Algorithm, ISCAS 2005, Specific Accuracy