Modeling of the SET and RESET Process in Bipolar Resistive Oxide-Based Memory Using Monte Carlo Simulations

A stochastic model of the resistive switching mechanism in bipolar oxide-based resistive random access memory (RRAM) is presented. The distribution of electron occupation probabilities obtained is in agreement with previous work. In particular, a low occupation region is formed near the cathode. Our simulations of the temperature dependence of the electron occupation probability near the anode and the cathode demonstrate a high robustness of the low occupation region. The RESET process in RRAM simulated with our stochastic model is in good agreement with experimental results.

• Type: Journal
• Year: 2010
• Where: NMA
• Authors: Alexander Makarov, Viktor Sverdlov, Siegfried Selberherr
• Keywords: Electron Occupation, Low Occupation Region, NMA 2010, Numerical Methods, Stochastic Model