Nano-Sim: A Step Wise Equivalent Conductance based Statistical Simulator for Nanotechnology Circuit Design

: New nanotechnology based devices are replacing CMOS devices to overcome CMOS technology’s scaling limitations. However, many such devices exhibit nonmonotonic I-V characteristics and uncertain properties which lead to the negative differential resistance (NDR) problem and the chaotic performance. This paper proposes a new circuit simulation approach that can effectively simulate nanotechnology devices with uncertain input sources and negative differential resistance (NDR) problem. The experimental results show a 20-30 times speedup comparing with existing simulators.

• Type: Journal
• Year: 2007
• Where: CORR
• Authors: Bharat Sukhwani, Uday Padmanabhan, Janet Meiling Wang
• Keywords: CMOS Devices, CORR 2007, Education, Nanotechnology Based Devices, Nonmonotonic I-v Characteristics