Novel library of logic gates with ambipolar CNTFETs: Opportunities for multi-level logic synthesis

This paper exploits the unique in-field controllability of the device polarity of ambipolar carbon nanotube field effect transistors (CNTFETs) to design a technology library with higher expressive power than conventional CMOS libraries. Based on generalized NORNAND-AOI-OAI primitives, the proposed library of static ambipolar CNTFET gates efficiently implements XOR functions, provides full-swing outputs, and is extensible to alternate forms with areaperformance tradeoffs. Since the design of the gates can be regularized, the ability to functionalize them in-field opens opportunities for novel regular fabrics based on ambipolar CNTFETs. Technology mapping of several multi-level logic benchmarks -- including multipliers, adders, and linear circuits -- indicates that on average, it is possible to reduce both the number of gates and area by 38% while also improving performance by 6.9

• Type: Conference
• Year: 2009
• Where: DATE
• Authors: M. Haykel Ben Jamaa, Kartik Mohanram, Giovanni De Micheli
• Keywords: Ambipolar Cntfet Gates, DATE 2009, Hardware, In-field Opens Opportunities, Unique In-field Controllability