Numerical study of quantum transport in carbon nanotube transistors

A deeper understanding of quantum effects in nano-electronic devices helps to improve the functionality and to develop new device types. The performance of carbon nanotube (CNT) field-effect transistor is studied using the non-equilibrium Green's function (NEGF) formalism. The effects of elastic and inelastic scattering and the impact of parameters, such as electron

• Type: Journal
• Year: 2008
• Where: MCS
• Authors: Mahdi Pourfath, Hans Kosina, Siegfried Selberherr
• Keywords: Deeper Understanding, Field-effect Transistor, MCS 2008, Nano-electronic Devices, Pattern Recognition