Semi-analytical model for schottky-barrier carbon nanotube and graphene nanoribbon transistors

This paper describes a physics-based semi-analytical model for Schottky-barrier carbon nanotube (CNT) and graphene nanoribbon (GNR) transistors. The model includes the treatment of (i) both tunneling and thermionic currents, (ii) ambipolar conduction, i.e., both electron and hole current components, (iii) ballistic transport, and (iv) multi-band propagation. Further, it reduces the computational complexity in the two critical and time-consuming steps, namely the calculation of the tunneling probability and the selfconsistent evaluation of the the surface potential in the channel. When validated against NanoTCAD ViDES, a quantum transport simulation framework based on the non-equilibrium Green’s function method, it is several orders of magnitude faster without significant loss in accuracy. Since the model is physics-based, it is parameterizable and can be used to study the effect of common parametric variations in CNT diameter and GNR width, Schottkybarrier height, and insulator thi...

• Type: Conference
• Year: 2010
• Where: GLVLSI
• Authors: Xuebei Yang, Gianluca Fiori, Giuseppe Iannaccone, Kartik Mohanram
• Keywords: GLVLSI 2010, Hole Current Components, Physics-based Semi-analytical Model, Schottky-barrier Carbon Nanotube, VLSI