Selected failure mechanisms of modern power modules

This paper reviews the main failure mechanisms occurring in modern power modules paying special attention to insulated gate bipolar transistor devices for high-power applications. This compendium provides the main failure modes, the physical or chemical processes that lead to the failure, and reports some major technological countermeasures, which are used for realizing the very stringent reliability requirements imposed in particular by the electrical traction applications.

• Type: Journal
• Year: 2002
• Where: MR
• Authors: Mauro Ciappa
• Keywords: Insulated Gate Bipolar Transistor, Main Failure, Main Failure Mechanisms, MR 2002, Robotics