Width-dependent Statistical Leakage Modeling for Random Dopant Induced Threshold Voltage Shift

Statistical behavior of device leakage and threshold voltage shows a strong width dependency under microscopic random dopant fluctuation. Leakage estimation using the conventional square-root method shows a discrepancy as large as 45% compared to the real case because it fails to model the effective VT shift in the subthreshold region. This paper presents a width-dependent statistical leakage model with an estimation error less than 5%. Design examples on SRAMs and domino circuits demonstrate the significance of the proposed model. Categories and Subject Descriptors B.8.2 [Hardware]: Performance and Reliability Performance Analysis and Design Aids General Terms Design, Performance Keywords Leakage, process variation, random dopant fluctuation

• Type: Conference
• Year: 2007
• Where: DAC
• Authors: Jie Gu, Sachin S. Sapatnekar, Chris H. Kim
• Keywords: DAC 2007, Design Automation, Leakage Estimation, Random Dopant Fluctuation, Statistical Leakage Model