An accurate and efficient stacking effect macro-model for leakage power in sub-100nm circuits is presented in this paper. Leakage power, including subthreshold leakage power and ga...
Shengqi Yang, Wayne Wolf, Narayanan Vijaykrishnan,...
In nanometer scaled CMOS devices significant increase in the subthreshold, the gate and the reverse biased junction band-toband-tunneling (BTBT) leakage, results in the large incr...