Tunneling based random-access memories (TRAM’s) have recently garnered a great amount of interests among the memory designers due to their intrinsic merits such as reduced power...
Hui Zhang, Pinaki Mazumder, Li Ding 0002, Kyoungho...
We proposed a combined magnetic and circuit level technique to explore the design methodology of SpinTorque Transfer RAM (SPRAM). A dynamic magnetic model of magnetic tunneling ju...
Yiran Chen, Xiaobin Wang, Hai Li, Harry Liu, Dimit...
It is likely that it will become increasingly difficult to manufacture the complex, heterogeneous logic structures that characterise current reconfigurable logic systems. As a res...
Non-volatile RAM (NVRAM) such as PRAM (Phase-change RAM), FeRAM (Ferroelectric RAM), and MRAM (Magnetoresistive RAM) has characteristics of both non-volatile storage and random ac...
In Hwan Doh, Jongmoo Choi, Donghee Lee, Sam H. Noh
The theoretical lower limit of subthreshold swing in MOSFETs (60 mV/decade) significantly restricts low voltage operation since it results in a low ON to OFF current ratio at low ...
Daeyeon Kim, Yoonmyung Lee, Jin Cai, Isaac Lauer, ...