Artificial neural networks (ANNs) have shown great promise in modeling circuit parameters for computer aided design applications. Leakage currents, which depend on process paramete...
Janakiraman Viraraghavan, Bharadwaj Amrutur, V. Vi...
Starting from the 90nm technology node, process induced stress has played a key role in the design of highperformance devices. The emergence of source/drain silicon germanium (S/D ...
Abstract--In double patterning lithography (DPL) layout decomposition for 45nm and below process nodes, two features must be assigned opposite colors (corresponding to different ex...
Andrew B. Kahng, Chul-Hong Park, Xu Xu, Hailong Ya...
Abstract--In this paper, the problem of stochastic synchronization analysis is investigated for a new array of coupled discretetime stochastic complex networks with randomly occurr...
Background: High-throughput re-sequencing, new genotyping technologies and the availability of reference genomes allow the extensive characterization of Single Nucleotide Polymorp...