ISQED
2011
IEEE
13 years 4 months ago
2011
IEEE
The extent to which the 6T SRAM bit cell can be perpetuated through continued scaling is of enormous technological and economic importance. Understanding the growing limitations i...
DDECS
2007
IEEE
14 years 7 months ago
2007
IEEE
Abstract: High speed DRAMs today suffer from an increased sensitivity to interference and noise problems. Signal integrity issues, caused by bit line and word line coupling, result...