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    ISCAS
    2005
    IEEE
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    Biasing techniques for subthreshold MOS resistive grids
    14 years 5 months ago
    Biasing techniques for subthreshold MOS resistive grids
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    — A classic resistive network implemented using MOS transistors suffers from non-linearity in the subthreshold exponential parameter κ that arises due to varying VGB and VBS. We...
    Keng Hoong Wee, Ji-Jon Sit, Rahul Sarpeshkar
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