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VLSID
2003
IEEE
144views VLSI» more  VLSID 2003»
14 years 11 months ago
The Impact of Bit-Line Coupling and Ground Bounce on CMOS SRAM Performance
In this paper, we provide an analytical framework to study the inter-cell and intra-cell bit-line coupling when it is superimposed with the ground bounce effect and show how those...
Li Ding 0002, Pinaki Mazumder