ISCAS
2006
IEEE
14 years 6 months ago
2006
IEEE
— In this paper we propose a new metric called “effective tunneling capacitance” (Ct eff ) to quantify the transient swing in the gate leakage (gate oxide tunneling) current ...
VLSID
2007
IEEE
15 years 1 months ago
2007
IEEE
In this paper we explore the use of a set of novel design metrics for characterizing the impact of gate oxide tunneling current in nanometer CMOS devices and perform Monte Carlo s...