Sciweavers

MR
2006
92views Robotics» more  MR 2006»
13 years 11 months ago
Failure mechanism of trench IGBT under short-circuit after turn-off
Power semiconductor devices under short-circuit are submitted to high current and high voltage simultaneously that induce high electrical and thermal stresses. Several types of ev...
A. Benmansour, Stephane Azzopardi, J. C. Martin, E...
DATE
2009
IEEE
122views Hardware» more  DATE 2009»
14 years 6 months ago
A highly resilient routing algorithm for fault-tolerant NoCs
Current trends in technology scaling foreshadow worsening transistor reliability as well as greater numbers of transistors in each system. The combination of these factors will so...
David Fick, Andrew DeOrio, Gregory K. Chen, Valeri...