Magnetic Random Access Memory (MRAM) is considered to be a promising future memory technology due to its low leakage power, high density and fast read speed. The heterogeneous int...
The number of functional errors escaping design verification and being released into final silicon is growing, due to the increasing complexity and shrinking production schedules ...
Previous studies have proposed techniques to dynamically change the architecture of a processor to better suit the characteristics of the workload at hand. However, all such appro...