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34
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VLSID
2006
IEEE
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VLSI
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VLSID 2006
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A Low Leakage and SNM Free SRAM Cell Design in Deep Sub Micron CMOS Technology
14 years 5 months ago
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www.ece.ncsu.edu
As the IC process technology scales, the oxide thickness and operating voltage continues to decrease. The gate oxide thickness in recent and future IC process technology has appro...
Sanjeev K. Jain, Pankaj Agarwal
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