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35
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GLVLSI
2008
IEEE
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VLSI
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GLVLSI 2008
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A low leakage 9t sram cell for ultra-low power operation
14 years 7 months ago
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www.ece.neu.edu
This paper presents the design and evaluation of a new SRAM cell made of nine transistors (9T). The proposed 9T cell utilizes a scheme with separate read and write wordlines; it i...
Sheng Lin, Yong-Bin Kim, Fabrizio Lombardi
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