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    345views Artificial Intelligence» more  TVLSI 2010»
    Improving Multi-Level NAND Flash Memory Storage Reliability Using Concatenated BCH-TCM Coding
    13 years 7 months ago
    Improving Multi-Level NAND Flash Memory Storage Reliability Using Concatenated BCH-TCM Coding
    Download  www.ecse.rpi.edu
    By storing more than one bit in each memory cell, multi-level per cell (MLC) NAND flash memories are dominating global flash memory market due to their appealing storage density ad...
    Shu Li, Tong Zhang
    claim paper
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