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29
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ISQED
2008
IEEE
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ISQED 2008
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Error-Tolerant SRAM Design for Ultra-Low Power Standby Operation
14 years 6 months ago
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bwrc.eecs.berkeley.edu
We present an error-tolerant SRAM design optimized for ultra-low standby power. Using SRAM cell optimization techniques, the maximum data retention voltage (DRV) of a 90nm 26kb SR...
Huifang Qin, Animesh Kumar, Kannan Ramchandran, Ja...
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