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    ETS
    2010
    IEEE
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    Analysis of resistive-bridging defects in SRAM core-cells: A comparative study from 90nm down to 40nm technology nodes
    13 years 11 months ago
    Analysis of resistive-bridging defects in SRAM core-cells: A comparative study from 90nm down to 40nm technology nodes
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    ÑIn this paper, we present a comparative study on the effects of resistive-bridging defects in the SRAM core-cells, considering different technology nodes. In particular, we analy...
    Renan Alves Fonseca, Luigi Dilillo, Alberto Bosio,...
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