This site uses cookies to deliver our services and to ensure you get the best experience. By continuing to use this site, you consent to our use of cookies and acknowledge that you have read and understand our Privacy Policy, Cookie Policy, and Terms
The effects of random variations during the manufacturing process on devices can be simulated as a variation of transistor parameters. Device degradation, due to temperature or vo...
Udo Sobe, Karl-Heinz Rooch, Andreas Ripp, Michael ...