The relative tolerances for interconnect and device parameter variations have not scaled with feature sizes which have brought about significant performance variability. As we scale toward 10nm technologies, this problem will only worsen. New circuit families and design methodologies will emerge to facilitate construction of reliable systems from unreliable nanometer scale components. Such methodologies require new models of performance which accurately capture the manufacturing realities. Recently, one step toward this goal was made via a new variational reduced order interconnect model that efficiently captures large scale fluctuations in global parameter values. Using variational calculus the linear interconnect systems are represented by analytical models that include the global variational parameters explicitly. In this work we present a framework which extends the previous work to a linear-centric simulation methodology with accurate nonlinear device models and their fluctuation...
Emrah Acar, Sani R. Nassif, Lawrence T. Pileggi