This paper describes the results of testing 50 single inline memory modules (SIMMs), each containing 16 16Mbit DRAM chips (DUTs); 39 SIMMs failed, and of the 800 DUTs, 116failed. In total 54 different test algorithms have been applied, using up to 168 different stress combinations for each test. The results show that GAL9R is the best test. Furthermore, it is shown that burst mode tests detect a completely different class offaults as compared with traditional word mode tests, and that tests with address scrambling enabled detect morefaults.
A. J. van de Goor, A. Paalvast